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FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet semiconductor components industries, llc, 2016 publication order number: november, 2016, rev. 1.0 FDMT1D3N08B/d 1 www.onsemi.com FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet 80 v, 164 a, 1.35 m features ? max r ds(on) = 1.35 m at v gs = 10 v, i d = 36 a ? max r ds(on) = 1.8 m at v gs = 8 v, i d = 31 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? next generation enhanced body diode technology, engineered for soft recovery ? low profile 8x8 mm mlp package ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process. advancements in both silicon and dual cool tm package technologies have been combined to offer the lowest r ds(on) while maintaining excellent swit ching performance by extremely low junction-to-ambient thermal resistance. applications ? oringfet / load switching ? synchronous rectification ? dc-dc conversion bottom top pin 1 s g s s d d d d dual cool tm 88 d d d d s s s g pin 1 s mosfet maximum ratings t a = 25 c unless otherwise noted. thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 80 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c (note 5) 164 a -continuous t c = 100 c (note 5) 103 -continuous t a = 25 c (note 1a) 36 -pulsed (note 4) 864 e as single pulse avalanche energy (note 3) 1734 mj p d power dissipation t c = 25 c 178 w power dissipation t a = 25 c (note 1a) 3.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction-to-case (top source) 1.9 c/w r jc thermal resistance, junction-to-case (bottom drain) 0.7 r ja thermal resistance, junction-to-ambient (note 1a) 38 r ja thermal resistance, junction-to-ambient (note 1b) 81 r ja thermal resistance, junction-to-ambient (note 1i) 15 r ja thermal resistance, junction-to-ambient (note 1j) 21 r ja thermal resistance, junction-to-ambient (note 1k) 9 device marking device package reel size tape width quantity 1d3n08b FDMT1D3N08B dual cool tm 88 13? 13.3 mm 3000 units
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 80 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 50 mv / c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 3.2 4.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -11 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 36 a 1.1 1.35 m v gs = 8 v, i d = 31 a 1.3 1.8 v gs = 10 v, i d = 36 a, t j = 125 c 1.8 2.2 g fs forward transconductance v ds = 5 v, i d = 36 a 116 s c iss input capacitance v ds = 40 v, v gs = 0 v, f = 1 mhz 14000 19600 pf c oss output capacitance 2050 2870 pf c rss reverse transfer capacitance 50 150 pf r g gate resistance 0.1 1.4 2.1 t d(on) turn-on delay time v dd = 40 v, i d = 36 a, v gs = 10 v, r gen = 6 63 101 ns t r rise time 56 90 ns t d(off) turn-off delay time 68 109 ns t f fall time 20 32 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 40 v, i d = 36 a 186 260 nc q g(tot) total gate charge v gs = 0 v to 8 v 152 213 nc q gs gate to source charge 67 nc q gd gate to drain ?miller? charge 37 nc q oss output charge v dd = 40 v, v gs = 0 v 185 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.6 a (note 2) 0.7 1.1 v v gs = 0 v, i s = 36 a (note 2) 0.8 1.2 t rr reverse recovery time i f = 36 a, di/dt = 100 a/ s 83 132 ns q rr reverse recovery charge 90 143 nc
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 3 thermal characteristics r jc thermal resistance, junction-to-case (top source) 1.9 c/w r jc thermal resistance, junction-to-case (bottom drain) 0.7 r ja thermal resistance, junction-to-ambient (note 1a) 38 r ja thermal resistance, junction-to-ambient (note 1b) 81 r ja thermal resistance, junction-to-ambient (note 1c) 26 r ja thermal resistance, junction-to-ambient (note 1d) 34 r ja thermal resistance, junction-to-ambient (note 1e) 14 r ja thermal resistance, junction-to-ambient (note 1f) 16 r ja thermal resistance, junction-to-ambient (note 1g) 26 r ja thermal resistance, junction-to-ambient (note 1h) 60 r ja thermal resistance, junction-to-ambient (note 1i) 15 r ja thermal resistance, junction-to-ambient (note 1j) 21 r ja thermal resistance, junction-to-ambient (note 1k) 9 r ja thermal resistance, junction-to-ambient (note 1l) 11 notes: 1. r ja is determined with the device mounted on a fr-4 board using a specified pad of 2 oz copper as shown below. r ca is determined by the user's board design. c. still air, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper d. still air, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper e. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper f. still air, 45.2x41.4x11.7mm aavid thermallo y part # 10-l41b-11 heat sink, minimum pad of 2 oz copper g. 200fpm airflow, no heat sink,1 in 2 pad of 2 oz copper h. 200fpm airflow, no heat sink, minimum pad of 2 oz copper i. 200fpm airflow, 20 .9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper j. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper k. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper l. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3. e as of 1734 mj is based on starting t j = 25 c; n-ch: l = 3 mh, i as = 34 a, v dd = 80 v, v gs =10 v. 100% test at l = 0.3 mh, i as = 77 a. 4. pulsed id please refer to fig 11 soa graph for more details. 5. computed continuous current limited to max junction temperat ure only, actual continuous curr ent will be limited by thermal & electro-mechanical application board design. a. 38 c/w when mounted on a 1 in 2 pad of 2 oz copper b. 81 c/w when mounted on a minimum pad of 2 oz copper g df ds sf ss g ds sf ss
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 4 typical characteristics t j = 25 c unless otherwise noted. figure 1. 0.00.51.01.52.0 0 80 160 240 320 v gs = 6.5 v v gs = 10 v v gs = 7 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 6 v v gs = 8 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 64 128 192 256 320 0 1 2 3 4 v gs = 10 v v gs = 6 v v gs = 7 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 8 v v gs = 6.5 v n o r m a l i z e d o n - r e s i s t a n c e vs. drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 i d = 36 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs. junction temperature figure 4. 45678910 0 3 6 9 12 t j = 125 o c i d = 36 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s . g a t e t o source voltage figure 5. transfer characteristics 234567 0 64 128 192 256 320 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 0.001 0.01 0.1 1 10 100 320 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs. source current
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 5 figure 7. 0 40 80 120 160 200 0 2 4 6 8 10 i d = 36 a v dd = 50 v v dd = 40 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 30 v gate charge characteristics figure 8. 0.1 1 10 80 1 10 100 1000 10000 100000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s . d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1000 10000 1 10 100 200 t j = 125 o c t j = 25 o c t j = 100 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 36 72 108 144 180 v gs = 4.5 v r t jc = 1.9 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs. case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.1 1 10 100 300 0.1 1 10 100 1000 curve bent to measured data 10 p s 100 ms 10 ms 1 ms 100 p s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 1.9 o c/w t c = 25 o c figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 100000 single pulse r t jc = 1.9 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted.
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 6 figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 notes: z t jc (t) = r(t) x r t jc r t jc = 1.9 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t jc (t) + t c p dm t 1 t 2 junction-to-case transient thermal response curve typical characteristics t j = 25 c unless otherwise noted.
FDMT1D3N08B n-channel dual cool tm 88 powertrench ? mosfet www.onsemi.com 7 dimensional outlin e and pad layout on semiconductor and the on logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidi aries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make chan ges without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, includin g ?typicals? must be validated for each customer application by customer's technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not d esigned, intended, or authorized for use as a critical component in life support systems or any fda class 3 me dical devices or medical devices with a same or similar classif ication in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against al l claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such uni ntended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/a ffirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
notes: unless otherwise specified a) this package is not presently registered with any standards committee. b) dimensions are inclusive of burrs, mold flash, and tie bar protrusions. c) all dimensions are in millimeters. d) drawing conforms to asme y14.5m-2009. e) it is recommended to have no traces or vias within the keep our area. f) drawing filename: mkt-pqfn08rrev2 8.000.10 8.000.10 c l pkg 14 b see detail a scale: 2x pin #1 ident land pattern recommendation 5.23 6.90 5.10 7.10 1 4 0.05 c a c l pkg (2x) 0.05 c (2x) 0.70 0.50 14 1.10 0.90 8x 1.68 1.48 5.33 5.13 2.00 6.00 7.00 6.80 (1.23) 0.10 c a b .05 c 0.95 0.75 c 0.30 0.20 2.78 0.05 0.00 8.00 seating plane 1.13 1.55 1.10 0.45 0.25 (4x) (0.60) (1.83) (1.00) 0.48 (8x) 85 8 5 23 8 7 6 5 2.00 9.00 1.10 1.20 (0.40) 4.24 3.94 (2.41) 4.03 3.68 (0.50) keep out area (1.56) (0.91)
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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